![]() For this purpose, two-dimensional (2D) crystals offer a unique platform for spintronics due to their remarkably broad range of spin-dependent properties 10, 11, 12. ![]() However, an unsolved challenge in the field is the realization of all-electrical methods to control the spin current and spin lifetime at ambient temperature 2. The fundamental spintronic device concepts, such as creation, manipulation and detection of spin current has been demonstrated in semiconductors 3, 4, 5 and spin transistor structures 6, 7, 8, 9 using both electrical and optical methods. ![]() Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies 1, 2. Our findings demonstrate an all-electrical spintronic device at room temperature with the creation, transport and control of the spin in 2D materials heterostructures, which can be key building blocks in future device architectures. This unprecedented control over the spin parameters by orders of magnitude stems from the gate tuning of the Schottky barrier at the MoS 2/graphene interface and MoS 2 channel conductivity leading to spin dephasing in high-SOC material. By performing non-local spin valve and Hanle measurements, we unambiguously prove the gate tunability of the spin current and spin lifetime in graphene/MoS 2 vdWhs at 300 K. Here we combine graphene and MoS 2 in a van der Waals heterostructure (vdWh) to demonstrate the electric gate control of the spin current and spin lifetime at room temperature. Two-dimensional (2D) crystals offer a unique platform due to their remarkable and contrasting spintronic properties, such as weak spin–orbit coupling (SOC) in graphene and strong SOC in molybdenum disulfide (MoS 2).
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